Studies in CuInS2 based solar cells, including ZnS and In2S3 buffer layers
Identifieur interne : 000465 ( Main/Repository ); précédent : 000464; suivant : 000466Studies in CuInS2 based solar cells, including ZnS and In2S3 buffer layers
Auteurs : RBID : Pascal:13-0363150Descripteurs français
- Pascal (Inist)
- Cellule solaire, Chimie surface, Homogénéité, Composition chimique, Evaporation, Circuit multiétage, Méthode section divisée, Spectre photoélectron RX, Diffraction RX, Système tampon, Spectrométrie Auger, Profil profondeur, Hétérojonction, Diffusion(transport), Evaluation performance, Dépôt bain chimique, Composé ternaire, Sulfure de cuivre, Sulfure d'indium, Sulfure de zinc, Couche tampon, Couche mince, Soufre, Verre, Molybdène, Oxyde de zinc, Hétérostructure, Cuivre, Interface, 8460J, 8105K, 6630P, 66, CuInS2, ZnS, In2S3, ZnO.
- Wicri :
English descriptors
- KwdEn :
- Auger electron spectrometry, Buffer layer, Buffer system, Chemical bath deposition, Chemical composition, Copper, Copper sulfide, Depth profile, Diffusion, Evaporation, Glass, Heterojunction, Heterostructures, Homogeneity, Indium sulfide, Interface, Molybdenum, Multistage circuit, Multistage method, Performance evaluation, Solar cell, Sulfur, Surface chemistry, Ternary compound, Thin film, X ray diffraction, X-ray photoelectron spectra, Zinc oxide, Zinc sulfide.
Abstract
The influence of the growth conditions on the surface chemistry and on the homogeneity of the chemical composition of CuInS2 (CIS) thin films, prepared by sequential evaporation of metallic precursors in presence of elemental sulfur in a two-stage process, was studied by X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD). It was found that the growth temperature affects the phase in which this compound grows. The samples deposited at temperatures around 500 °C (2nd stage) contain mainly the CuInS2 phase; however, secondary phases like In2S3, Cu2S were additionally identified at the surface and in the bulk of CuInS2 samples deposited at temperatures greater than 550 °C. Also, the elemental composition of the layers constituting the Glass/Mo/CulnS2/buffer/ZnO structure was studied through Auger electron spectroscopy (AES) depth profile measurements. AES measurements carried out across the Class/Mo/CulnS2/buffer/ZnO heterojunction gave evidence of Cu diffusion from the CuInS2 layer towards the rest of the layers constituting the device, and of the formation of a MoS2 layer in the Mo/CuInS2 interface. The performance of CuInS2-based solar cells fabricated using CBD (chemical bath deposition) deposited ZnS as buffer layer was compared to that of cells fabricated using CBD deposited In2S3 as buffer.
Links toward previous steps (curation, corpus...)
- to stream Main, to step Corpus: 000426
Links to Exploration step
Pascal:13-0363150Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Studies in CuInS<sub>2</sub> based solar cells, including ZnS and In<sub>2</sub>S<sub>3</sub> buffer layers</title><author><name sortKey="Calderon, C" uniqKey="Calderon C">C. Calderon</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Departamento de Física, Universidad Nacional de Colombia</s1><s2>Bogotá</s2><s3>COL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Colombie</country><wicri:noRegion>Bogotá</wicri:noRegion></affiliation></author><author><name sortKey="Oyola, J S" uniqKey="Oyola J">J. S. Oyola</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Departamento de Física, Universidad Nacional de Colombia</s1><s2>Bogotá</s2><s3>COL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Colombie</country><wicri:noRegion>Bogotá</wicri:noRegion></affiliation></author><author><name sortKey="Bartolo Perez, P" uniqKey="Bartolo Perez P">P. Bartolo-Perez</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Departamento de Física Aplicada, CINVESTAV-IPN</s1><s2>Mérida, Yucatán</s2><s3>MEX</s3><sZ>3 aut.</sZ></inist:fA14><country>Mexique</country><wicri:noRegion>Mérida, Yucatán</wicri:noRegion></affiliation></author><author><name sortKey="Gordillo, G" uniqKey="Gordillo G">G. Gordillo</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Departamento de Física, Universidad Nacional de Colombia</s1><s2>Bogotá</s2><s3>COL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Colombie</country><wicri:noRegion>Bogotá</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0363150</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0363150 INIST</idno><idno type="RBID">Pascal:13-0363150</idno><idno type="wicri:Area/Main/Corpus">000426</idno><idno type="wicri:Area/Main/Repository">000465</idno></publicationStmt><seriesStmt><idno type="ISSN">1369-8001</idno><title level="j" type="abbreviated">Mater. sci. semicond. process.</title><title level="j" type="main">Materials science in semiconductor processing</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Auger electron spectrometry</term><term>Buffer layer</term><term>Buffer system</term><term>Chemical bath deposition</term><term>Chemical composition</term><term>Copper</term><term>Copper sulfide</term><term>Depth profile</term><term>Diffusion</term><term>Evaporation</term><term>Glass</term><term>Heterojunction</term><term>Heterostructures</term><term>Homogeneity</term><term>Indium sulfide</term><term>Interface</term><term>Molybdenum</term><term>Multistage circuit</term><term>Multistage method</term><term>Performance evaluation</term><term>Solar cell</term><term>Sulfur</term><term>Surface chemistry</term><term>Ternary compound</term><term>Thin film</term><term>X ray diffraction</term><term>X-ray photoelectron spectra</term><term>Zinc oxide</term><term>Zinc sulfide</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Cellule solaire</term><term>Chimie surface</term><term>Homogénéité</term><term>Composition chimique</term><term>Evaporation</term><term>Circuit multiétage</term><term>Méthode section divisée</term><term>Spectre photoélectron RX</term><term>Diffraction RX</term><term>Système tampon</term><term>Spectrométrie Auger</term><term>Profil profondeur</term><term>Hétérojonction</term><term>Diffusion(transport)</term><term>Evaluation performance</term><term>Dépôt bain chimique</term><term>Composé ternaire</term><term>Sulfure de cuivre</term><term>Sulfure d'indium</term><term>Sulfure de zinc</term><term>Couche tampon</term><term>Couche mince</term><term>Soufre</term><term>Verre</term><term>Molybdène</term><term>Oxyde de zinc</term><term>Hétérostructure</term><term>Cuivre</term><term>Interface</term><term>8460J</term><term>8105K</term><term>6630P</term><term>66</term><term>CuInS2</term><term>ZnS</term><term>In2S3</term><term>ZnO</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Soufre</term><term>Verre</term><term>Molybdène</term><term>Cuivre</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The influence of the growth conditions on the surface chemistry and on the homogeneity of the chemical composition of CuInS<sub>2</sub> (CIS) thin films, prepared by sequential evaporation of metallic precursors in presence of elemental sulfur in a two-stage process, was studied by X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD). It was found that the growth temperature affects the phase in which this compound grows. The samples deposited at temperatures around 500 °C (2nd stage) contain mainly the CuInS<sub>2</sub> phase; however, secondary phases like In<sub>2</sub>S<sub>3</sub>, Cu<sub>2</sub>S were additionally identified at the surface and in the bulk of CuInS<sub>2</sub> samples deposited at temperatures greater than 550 °C. Also, the elemental composition of the layers constituting the Glass/Mo/CulnS<sub>2</sub>/buffer/ZnO structure was studied through Auger electron spectroscopy (AES) depth profile measurements. AES measurements carried out across the Class/Mo/CulnS<sub>2</sub>/buffer/ZnO heterojunction gave evidence of Cu diffusion from the CuInS<sub>2</sub> layer towards the rest of the layers constituting the device, and of the formation of a MoS<sub>2</sub> layer in the Mo/CuInS<sub>2</sub> interface. The performance of CuInS<sub>2</sub>-based solar cells fabricated using CBD (chemical bath deposition) deposited ZnS as buffer layer was compared to that of cells fabricated using CBD deposited In<sub>2</sub>S<sub>3</sub> as buffer.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1369-8001</s0></fA01><fA03 i2="1"><s0>Mater. sci. semicond. process.</s0></fA03><fA05><s2>16</s2></fA05><fA06><s2>6</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Studies in CuInS<sub>2</sub> based solar cells, including ZnS and In<sub>2</sub>S<sub>3</sub> buffer layers</s1></fA08><fA11 i1="01" i2="1"><s1>CALDERON (C.)</s1></fA11><fA11 i1="02" i2="1"><s1>OYOLA (J. S.)</s1></fA11><fA11 i1="03" i2="1"><s1>BARTOLO-PEREZ (P.)</s1></fA11><fA11 i1="04" i2="1"><s1>GORDILLO (G.)</s1></fA11><fA14 i1="01"><s1>Departamento de Física, Universidad Nacional de Colombia</s1><s2>Bogotá</s2><s3>COL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="02"><s1>Departamento de Física Aplicada, CINVESTAV-IPN</s1><s2>Mérida, Yucatán</s2><s3>MEX</s3><sZ>3 aut.</sZ></fA14><fA20><s1>1382-1387</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>2888A</s2><s5>354000501052880040</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>22 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0363150</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Materials science in semiconductor processing</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>The influence of the growth conditions on the surface chemistry and on the homogeneity of the chemical composition of CuInS<sub>2</sub> (CIS) thin films, prepared by sequential evaporation of metallic precursors in presence of elemental sulfur in a two-stage process, was studied by X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD). It was found that the growth temperature affects the phase in which this compound grows. The samples deposited at temperatures around 500 °C (2nd stage) contain mainly the CuInS<sub>2</sub> phase; however, secondary phases like In<sub>2</sub>S<sub>3</sub>, Cu<sub>2</sub>S were additionally identified at the surface and in the bulk of CuInS<sub>2</sub> samples deposited at temperatures greater than 550 °C. Also, the elemental composition of the layers constituting the Glass/Mo/CulnS<sub>2</sub>/buffer/ZnO structure was studied through Auger electron spectroscopy (AES) depth profile measurements. AES measurements carried out across the Class/Mo/CulnS<sub>2</sub>/buffer/ZnO heterojunction gave evidence of Cu diffusion from the CuInS<sub>2</sub> layer towards the rest of the layers constituting the device, and of the formation of a MoS<sub>2</sub> layer in the Mo/CuInS<sub>2</sub> interface. The performance of CuInS<sub>2</sub>-based solar cells fabricated using CBD (chemical bath deposition) deposited ZnS as buffer layer was compared to that of cells fabricated using CBD deposited In<sub>2</sub>S<sub>3</sub> as buffer.</s0></fC01><fC02 i1="01" i2="X"><s0>001D03F15</s0></fC02><fC02 i1="02" i2="X"><s0>001D06C02D1</s0></fC02><fC02 i1="03" i2="X"><s0>001D03F02</s0></fC02><fC02 i1="04" i2="3"><s0>001B80A15L</s0></fC02><fC02 i1="05" i2="X"><s0>230</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Cellule solaire</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Solar cell</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Célula solar</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Chimie surface</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Surface chemistry</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Homogénéité</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Homogeneity</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Homogeneidad</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Composition chimique</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Chemical composition</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Composición química</s0><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Evaporation</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Evaporation</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Evaporación</s0><s5>05</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Circuit multiétage</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Multistage circuit</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Circuito multipiso</s0><s5>06</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Méthode section divisée</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Multistage method</s0><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Spectre photoélectron RX</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>X-ray photoelectron spectra</s0><s5>08</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Diffraction RX</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>X ray diffraction</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Difracción RX</s0><s5>09</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Système tampon</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Buffer system</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Sistema amortiguador</s0><s5>10</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Spectrométrie Auger</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Auger electron spectrometry</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Espectrometría Auger</s0><s5>11</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Profil profondeur</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Depth profile</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Perfil profundidad</s0><s5>12</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Hétérojonction</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>Heterojunction</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Heterounión</s0><s5>13</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Diffusion(transport)</s0><s5>14</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Diffusion</s0><s5>14</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>Evaluation performance</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="ENG"><s0>Performance evaluation</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="SPA"><s0>Evaluación prestación</s0><s5>15</s5></fC03><fC03 i1="16" i2="X" l="FRE"><s0>Dépôt bain chimique</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="ENG"><s0>Chemical bath deposition</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="SPA"><s0>Depósito baño químico</s0><s5>16</s5></fC03><fC03 i1="17" i2="X" l="FRE"><s0>Composé ternaire</s0><s5>22</s5></fC03><fC03 i1="17" i2="X" l="ENG"><s0>Ternary compound</s0><s5>22</s5></fC03><fC03 i1="17" i2="X" l="SPA"><s0>Compuesto ternario</s0><s5>22</s5></fC03><fC03 i1="18" i2="X" l="FRE"><s0>Sulfure de cuivre</s0><s5>23</s5></fC03><fC03 i1="18" i2="X" l="ENG"><s0>Copper sulfide</s0><s5>23</s5></fC03><fC03 i1="18" i2="X" l="SPA"><s0>Cobre sulfuro</s0><s5>23</s5></fC03><fC03 i1="19" i2="X" l="FRE"><s0>Sulfure d'indium</s0><s5>24</s5></fC03><fC03 i1="19" i2="X" l="ENG"><s0>Indium sulfide</s0><s5>24</s5></fC03><fC03 i1="19" i2="X" l="SPA"><s0>Indio sulfuro</s0><s5>24</s5></fC03><fC03 i1="20" i2="X" l="FRE"><s0>Sulfure de zinc</s0><s5>25</s5></fC03><fC03 i1="20" i2="X" l="ENG"><s0>Zinc sulfide</s0><s5>25</s5></fC03><fC03 i1="20" i2="X" l="SPA"><s0>Zinc sulfuro</s0><s5>25</s5></fC03><fC03 i1="21" i2="X" l="FRE"><s0>Couche tampon</s0><s5>26</s5></fC03><fC03 i1="21" i2="X" l="ENG"><s0>Buffer layer</s0><s5>26</s5></fC03><fC03 i1="21" i2="X" l="SPA"><s0>Capa tampón</s0><s5>26</s5></fC03><fC03 i1="22" i2="X" l="FRE"><s0>Couche mince</s0><s5>27</s5></fC03><fC03 i1="22" i2="X" l="ENG"><s0>Thin film</s0><s5>27</s5></fC03><fC03 i1="22" i2="X" l="SPA"><s0>Capa fina</s0><s5>27</s5></fC03><fC03 i1="23" i2="X" l="FRE"><s0>Soufre</s0><s2>NC</s2><s2>FX</s2><s5>28</s5></fC03><fC03 i1="23" i2="X" l="ENG"><s0>Sulfur</s0><s2>NC</s2><s2>FX</s2><s5>28</s5></fC03><fC03 i1="23" i2="X" l="SPA"><s0>Azufre</s0><s2>NC</s2><s2>FX</s2><s5>28</s5></fC03><fC03 i1="24" i2="X" l="FRE"><s0>Verre</s0><s5>29</s5></fC03><fC03 i1="24" i2="X" l="ENG"><s0>Glass</s0><s5>29</s5></fC03><fC03 i1="24" i2="X" l="SPA"><s0>Vidrio</s0><s5>29</s5></fC03><fC03 i1="25" i2="X" l="FRE"><s0>Molybdène</s0><s2>NC</s2><s2>FX</s2><s5>30</s5></fC03><fC03 i1="25" i2="X" l="ENG"><s0>Molybdenum</s0><s2>NC</s2><s2>FX</s2><s5>30</s5></fC03><fC03 i1="25" i2="X" l="SPA"><s0>Molibdeno</s0><s2>NC</s2><s2>FX</s2><s5>30</s5></fC03><fC03 i1="26" i2="X" l="FRE"><s0>Oxyde de zinc</s0><s5>31</s5></fC03><fC03 i1="26" i2="X" l="ENG"><s0>Zinc oxide</s0><s5>31</s5></fC03><fC03 i1="26" i2="X" l="SPA"><s0>Zinc óxido</s0><s5>31</s5></fC03><fC03 i1="27" i2="3" l="FRE"><s0>Hétérostructure</s0><s5>32</s5></fC03><fC03 i1="27" i2="3" l="ENG"><s0>Heterostructures</s0><s5>32</s5></fC03><fC03 i1="28" i2="X" l="FRE"><s0>Cuivre</s0><s2>NC</s2><s5>33</s5></fC03><fC03 i1="28" i2="X" l="ENG"><s0>Copper</s0><s2>NC</s2><s5>33</s5></fC03><fC03 i1="28" i2="X" l="SPA"><s0>Cobre</s0><s2>NC</s2><s5>33</s5></fC03><fC03 i1="29" i2="X" l="FRE"><s0>Interface</s0><s5>34</s5></fC03><fC03 i1="29" i2="X" l="ENG"><s0>Interface</s0><s5>34</s5></fC03><fC03 i1="29" i2="X" l="SPA"><s0>Interfase</s0><s5>34</s5></fC03><fC03 i1="30" i2="X" l="FRE"><s0>8460J</s0><s4>INC</s4><s5>56</s5></fC03><fC03 i1="31" i2="X" l="FRE"><s0>8105K</s0><s4>INC</s4><s5>57</s5></fC03><fC03 i1="32" i2="X" l="FRE"><s0>6630P</s0><s4>INC</s4><s5>58</s5></fC03><fC03 i1="33" i2="X" l="FRE"><s0>66</s0><s4>INC</s4><s5>59</s5></fC03><fC03 i1="34" i2="X" l="FRE"><s0>CuInS2</s0><s4>INC</s4><s5>82</s5></fC03><fC03 i1="35" i2="X" l="FRE"><s0>ZnS</s0><s4>INC</s4><s5>83</s5></fC03><fC03 i1="36" i2="X" l="FRE"><s0>In2S3</s0><s4>INC</s4><s5>84</s5></fC03><fC03 i1="37" i2="X" l="FRE"><s0>ZnO</s0><s4>INC</s4><s5>85</s5></fC03><fC07 i1="01" i2="X" l="FRE"><s0>Chalcopyrite</s0><s5>17</s5></fC07><fC07 i1="01" i2="X" l="ENG"><s0>Chalcopyrite</s0><s5>17</s5></fC07><fC07 i1="01" i2="X" l="SPA"><s0>Calcopirita</s0><s5>17</s5></fC07><fC07 i1="02" i2="X" l="FRE"><s0>Dispositif optoélectronique</s0><s5>18</s5></fC07><fC07 i1="02" i2="X" l="ENG"><s0>Optoelectronic device</s0><s5>18</s5></fC07><fC07 i1="02" i2="X" l="SPA"><s0>Dispositivo optoelectrónico</s0><s5>18</s5></fC07><fC07 i1="03" i2="X" l="FRE"><s0>Composé II-VI</s0><s5>19</s5></fC07><fC07 i1="03" i2="X" l="ENG"><s0>II-VI compound</s0><s5>19</s5></fC07><fC07 i1="03" i2="X" l="SPA"><s0>Compuesto II-VI</s0><s5>19</s5></fC07><fN21><s1>343</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV3/Data/Main/Repository
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 000465 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 000465 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV3
|flux= Main
|étape= Repository
|type= RBID
|clé= Pascal:13-0363150
|texte= Studies in CuInS2 based solar cells, including ZnS and In2S3 buffer layers
}}
| This area was generated with Dilib version V0.5.77. |  |